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| FH101 High Dynamic Range FET Product Features x x x x x x x 50 - 4000 MHz Low Noise Figure 18 dB Gain +36 dBm OIP3 +18 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package x MTTF > 100 years Product Description The FH101 is a high dynamic range FET packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85qC. The FH101 is available in the environmentally-friendly lead-free/green/RoHScompliant SOT-89 package. The device utilizes a high reliability GaAs MESFET technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the FH101 will work for other applications within the 50 to 4000 MHz frequency range such as fixed wireless. Functional Diagram 4 1 2 3 Function Gate Drain Source Pin No. 1 3 2, 4 Applications x x x x Mobile Infrastructure CATV / DBS W-LAN / ISM Defense / Homeland Security Specifications (1) DC Electrical Parameter Saturated Drain Current, Idss Transconductance, Gm Pinch-off Voltage, Vp (3) (2) Typical Performance (6) Units Min mA mS V 100 -3 Typ 140 120 -1.5 Max 170 Parameter Frequency S21 S11 S22 Output P1dB Output IP3 (4) Noise Figure Drain Bias Gate Voltage Units MHz dB dB dB dBm dBm dB V 900 19 -11 -10 +18.8 +36 2.7 Typical 1960 2140 16.5 16.5 -20 -22 -9 -9 +18.1 +19.1 +36 +36 3.1 3.0 5V @ 140mA 0 RF Parameter Operational Bandwidth Test Frequency Small-signal Gain, Gss Max Stable Gain, Gmsg Output IP3 (4) P1dB Minimum Noise Figure (5) Drain Bias Gate Bias Units Min MHz MHz dB dB dBm dBm dB V V Typ Max 50 - 4000 800 17 18 23 +32 +36 +18 0.77 +5 0 6. The device requires appropriate matching to become unconditionally stable. Parameters reflect performance in an appropriate application circuit. 1. DC and RF parameters are measured under the following conditions unless otherwise noted: 25qC with Vds = 5V, Vgs = 0V, in a 50 system. 2. Idss is measured with Vgs = 0V. 3. Pinch-off voltage is measured with Ids = 0.6 mA. 4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 5. The minimum noise figure has .S = .L = .OPT. : Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature Drain to Source Voltage Gate to Source Voltage Gate Current RF Input Power (continuous) Junction Temperature -40 to +85 qC -55 to +150 qC +7 V -6 V 4.5 mA 4 dB above Input P1dB +220 qC Rating Ordering Information Part No. FH101-G Description High Dynamic Range FET (lead-free/green/RoHS-compliant SOT-89 package) Specifications and information are subject to change without notice. Operation of this device above any of these parameters may cause permanent damage. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x Web site: www.wj.com Page 1 of 7 April 2007 FH101 High Dynamic Range FET Typical Device Data Data is shown at a biasing configuration of VDS = +5 V, IDS = 140 mA, 25 qC for the unmatched device in a 50 ohm system) 1.0 24 0 3. S21 and MSG (dB) 0 4. 0.2 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 16 -5. 0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 10.0 18 12 0 1 Frequency (GHz) 2 3 .4 -0 .4 -0 -0 .6 -0 .6 Swp Min 0.01GHz -0.8 -0.8 .0 -2 .0 -2 Swp Min 0.01GHz Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, as high as the maximum stable gain. The maximum stable gain is shown in the red line. The impedance plots are shown from 10 - 6000 MHz, with markers placed at 0.5 - 6.0 GHz in 0.5 GHz increments. Output IP3 vs. Temperature Output IP3 vs. Output Power Noise Figure vs. Frequency 45 40 35 30 5V 100% Idss 45 Noise Figure (dB) 2.5 NF (unmatched device) OIP3 (dBm) OIP3 (dBm) 40 35 30 5V 100% Idss 2 1.5 1 0.5 0 Minimum NF 25 -40 -15 10 35 60 85 Temperature (qC) 25 0 2 4 6 8 10 12 Output Power per tone (dBm) 0.5 1 -1.0 -1.0 1.5 Frequency (GHz) S-Parameters (VD = +5 V, ID = 140 mA, VG = 0 V, 25 qC, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 0.00 -0.13 -0.34 -0.55 -0.83 -1.16 -1.50 -1.80 -2.03 -2.25 -2.37 -2.55 -2.62 -4.08 -19.64 -39.41 -58.33 -75.93 -93.29 -110.36 -125.64 -140.92 -155.64 -169.80 177.26 165.93 19.36 19.19 18.85 18.47 17.95 17.47 16.82 16.21 15.65 15.05 14.42 13.74 13.18 176.06 164.65 150.19 136.21 123.24 110.92 99.18 88.19 77.53 67.15 57.62 48.11 39.86 -51.05 -37.15 -31.34 -28.24 -26.22 -24.88 -23.95 -23.27 -22.81 -22.39 -22.25 -22.08 -22.01 87.96 78.37 66.75 55.74 45.25 35.22 26.69 18.17 9.87 2.11 -4.68 -11.35 -17.16 -4.38 -4.52 -4.77 -5.19 -5.77 -6.44 -7.14 -7.94 -8.84 -9.57 -10.43 -11.43 -12.30 -3.34 -11.51 -22.43 -33.05 -43.46 -53.09 -61.08 -69.92 -78.43 -86.41 -93.92 -101.88 -108.95 Noise Parameters (VD = +5 V, ID = 140 mA, VG = 0 V, 25 qC, calibrated to device leads) Freq (MHz) NF,min (dB) MagOpt (mag) AngOpt (deg) Rn 700 800 900 1000 1100 1200 1300 1400 0.51 0.77 0.66 0.74 0.85 0.85 0.95 1.07 0.574 0.535 0.508 0.488 0.463 0.458 0.446 0.450 32.8 37.4 44.1 50.4 56.4 62.0 67.3 73.3 0.403 0.409 0.379 0.365 0.357 0.345 0.335 0.323 Device S-parameters and noise are available for download off of the website at: http://www.wj.com Specifications and information are subject to change without notice. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x Web site: www.wj.com Page 2 of 7 April 2007 -4 .0 -3 .0 -5. -4 .0 0 14 -0. 2 -0. 2 2 -10. 0 -10.0 -3 .0 0.2 20 5.0 10.0 0. 4 0. 4 22 DB(GMax()) 2. 0 2. 0 DB(|S(2,1)|) 6 0. 6 0. Swp Max 6GHz 1.0 0.8 0.8 Gain and Max. Stable Gain S11 S22 Swp Max 6GHz 0 3. 0 4. 5.0 10.0 FH101 High Dynamic Range FET Reference Design: 35 MHz, 17 dB Gain Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current MHz dB dB dB dBm dBm dB V mA ID=R6 R=390 Ohm Gain (dB) 16 -10 15 -15 4.0 3.2 14 -20 13 25 30 35 Frequency (MHz) 40 45 -25 ID=C6 C=1000 pF ID=R7 R=390 Ohm +5V ID=C3 C=1000 pF FH101 NET="FH1" ID=C1 R=3.9 Ohm ID=R1 C=68 pF 1 2 ID=L1 L=470 nH ID=C2 C=1000 pF ID=R8 L=390 nH Notes: 1. 8vpvA7hqAHhrvhy)A #ABrrxAHG!9TTA rA2A#!A AAprAAUurAhvAvpvAyvrAuhAhAyvrAvrqhprAsA$A 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Reference Design: 170 MHz, 14 dB Gain Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current ID=R6 R=240 Ohm MHz dB dB dB dBm dBm dB V mA 13 -20 2.7 2.7 12 -30 11 0.12 0.14 0.16 0.18 Frequency (GHz) 0.2 0.22 -40 ID=C6 ID=R7 C=1000 pF R=240 Ohm +5V ID=C3 C=1000 pF FH101 NET="FH1" ID=R1 C=24 pF 1 2 ID=L1 L=220 nH ID=R2 R=4 Ohm ID=R8 L=82 nH ID=C2 C=1000 pF Notes: 1. Circuit Board Material: .014" Getek ML200DSS rA2A#!A AAprAAUurAhvAvpvAyvrAuhAhAyvrAvrqhprAsA$A 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Specifications and information are subject to change without notice. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x Web site: www.wj.com Page 3 of 7 April 2007 S11, S22 (dB) Gain (dB) 160 14.1 -25 -21 170 14.2 -33 -23 +18.6 +36 2.7 +5 140 180 14.3 -28 -26 Gain / Return Loss (dB) 15 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) 0 14 -10 S11, S22 (dB) 30 16.6 -19 -21 35 16.8 -20 -16 +18 +34 3.4 +5 140 40 16.8 -13 -14 Gain / Return Loss 18 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) 0 17 -5 FH101 High Dynamic Range FET Reference Design: 260 MHz, 25 dB Gain Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current MHz dB dB dB dBm dBm dB V mA 250 25.2 -23 -12 260 25.1 -22 -14 +19.4 +34.5 1.9 +5 140 270 24.9 -13 -17 Gain / Return Loss 26 0 25 -5 S11, S22 (dB) S11, S22 (dB) Gain (dB) 24 -10 23 -15 1.8 2.1 22 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) -20 21 0.2 ID=C3 C=1.8e4 pF -25 0.22 0.24 0.26 Frequency (GHz) 0.28 0.3 +5V ID=C6 ID=R7 C=1000 pF R=2000 Ohm ID=R6 R=2000 Ohm FH101 NET="FH1" 2 ID=L1 L=220 nH ID=C1 C=1000 pF ID=R1 L=120 nH 1 ID=C2 C=1000 pF ID=C5 R=1e4 Ohm C=0.2 pF R=3.3 Ohm Notes: 1. Circuit Board Material: .0 #ABrrxAHG!9TTA rA2A#!A AAprAAUurAhvAvpvAyvrAuhAhAyvrAvrqhprAsA$A 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Reference Design: 460 MHz, 20 dB Gain Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current ID=R6 R=750 Ohm MHz dB dB dB dBm dBm dB V mA ID=C6 C=1000 pF Gain (dB) 450 19.9 -24 -16 1.95 460 19.9 -24 -15 +18.6 +36 2.08 +5 140 470 19.9 -21 -15 Gain / Return Loss 21 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) 0 20 -5 19 -10 18 -15 2.17 17 -20 16 0.34 0.38 0.42 0.46 0.5 Frequency (GHz) 0.54 0.58 -25 ID=R7 +5V R=750 Ohm ID=C3 C=1000 pF FH101 NET="FH1" ID=C1 C=1000 pF ID=R1 L=36 nH 1 2 ID=L1 L=100 nH ID=R2 L=10 nH ID=C5 R=5000 Ohm ID=C2 C=1000 pF Notes: 1. Circuit Board Material: .0 #ABrrxAHG!9TTA rA2A#!A AAprAAUurAhvAvpvAyvrAuhAhAyvrAvrqhprAsA$A 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Specifications and information are subject to change without notice. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x Web site: www.wj.com Page 4 of 7 April 2007 FH101 High Dynamic Range FET Reference Design: 790 MHz, 19 dB Gain Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current GHz dB dB dB dBm dBm dB V mA 746 19.2 -20 -22 790 19.4 -28 -23 +19 +36 2.3 +5 140 +5V ID=C4 C=1e4 pF ID=C6 C=100 pF ID=R7 R=560 Ohm ID=C3 C=100 pF 18.5 18 17.5 17 0.7 0.75 0.8 Frequency (GHz) 0.85 0.9 -15 -20 -25 -30 ID=R6 R=560 Ohm ID=C1 C=100 pF 1 FH101 NET="FH1" 2 ID=L1 L=27 nH ID=R1 L=8.2 nH ID=C5 L=10 nH ID=R2 L=2.2 nH ID=C2 C=100 pF Notes: 1. Circuit Board Material: .0 #ABrrxAHG!9TTA A2A#!A AAprAAUurAhvAvpvAyvrAuhAhAyvrAvrqhprAsA$A 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Reference Design: 790 MHz, 17 dB Gain Frequency Gain S11 S22 P1dB OIP3 Noise Figure Voltage Current GHz dB dB dB dBm dBm dB V mA 746 17.3 -19 -22 790 17.4 -19 -22 +19 +36 2.1 +5 140 835 17.4 -16 -21 Gain / Return Loss 19 0 Noise Figure vs. Frequency 4 25 C 50 C 90 C DB(|S(1,1)|) (R) 18 DB(|S(2,1)|) (L) DB(|S(2,2)|) (R) -5 S 11, S22 (dB ) 3 NF (dB) G ain (dB) 17 -10 2 1 0 740 16 -15 2.0 2.2 15 -20 14 0.7 +5V -25 0.75 ID=C4 C=10000 pF 760 780 800 S11, S22 (dB) Gain (dB) 835 19.3 -15 -22 Gain / Return Loss 20 19.5 19 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) 0 -5 -10 820 840 0.8 Frequency (GHz) 0.85 0.9 Frequency (MHz) ID=C6 ID=R7 C=100 pF R=360 Ohm ID=R6 R=360 Ohm ID=C3 C=100 pF FH101 NET="FH1" ID=R1 L=12 nH 1 2 ID=L1 L=33 nH ID=C2 C=100 pF ID=C1 C=100 pF ID=C5 R=10000 Ohm Notes: 1. Circuit Board Material: .0 #ABrrxAHG!9TTA A2A#!A AAprAAUurAhvAvpvAyvrAuhAhAyvrAvrqhprAsA$A 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Specifications and information are subject to change without notice. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x Web site: www.wj.com Page 5 of 7 April 2007 FH101 High Dynamic Range FET Reference Design: 880 MHz, 18 dB Gain Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current GHz dB dB dB dBm dBm dB V mA 850 17.95 -16 -23 875 17.96 -15 -22 +19 +36 1.83 +5 140 +5V Gain (dB) 17 -10 16 -15 1.8 1.85 15 -20 14 0.7 ID=C4 C=1e4 pF -25 0.8 Frequency (GHz) 0.9 1 ID=C6 ID=R7 C=100 pF R=360 Ohm ID=R6 R=360 Ohm ID=C3 C=100 pF FH101 NET="FH1" 2 ID=L1 L=33 nH ID=C2 C=100 pF ID=C1 C=100 pF ID=R1 L=10 nH 1 ID=C5 R=1e4 Ohm Notes: 1. Circuit Board Material: .0 #ABrrxAHG!9TTA A2A#!A AAprAAUurAhvAvpvAyvrAuhAhAyvrAvrqhprAsA$A 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Reference Design: 800 - 2200 MHz, 15 dB Gain Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current GHz dB dB dB dBm dBm dB V mA 900 14.9 -22 -14 +19.1 +35.7 2.4 1900 16.3 -10 -9.7 +19.4 +37.0 2.6 +5 140 2140 16.4 -18 -9.6 +19.1 +36.0 2.8 Gain / Return Loss 18 20 DB(|S(1,1)|) (R) 16 DB(|S(2,1)|) (L) DB(|S(2,2)|) (R) 10 Return Loss (dB) Gain (dB) 14 0 12 -10 10 -20 8 0.75 1 1.25 1.5 1.75 Frequency (GHz) 2 2.25 -30 +5V ID=C4 C=100 pF ID=C6 C=100 pF ID=R7 R=240 Ohm ID=R6 R=240 Ohm ID=C1 R=2.2 Ohm TLINP ID=TL1 Z0=50 Ohm L=80 mil Eeff=3.4 Loss=0 F0=0 GHz ID=C3 C=100 pF FH101 NET="FH1" ID=R1 L=2.7 nH 1 2 ID=L1 L=18 nH ID=C2 C=100 pF C=2 pF ID=C5 L=6.8 nH Notes: 1. Circuit Board Material: .0 #ABrrxAHG!9TTA A2A#!A AAprAAUurAhvAvpvAyvrAuhAhAyvrAvrqhprAsA$A 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. 3. A dc blocking capacitor needs to be placed before C1 if dc is present at the input of the circuit. Specifications and information are subject to change without notice. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x Web site: www.wj.com Page 6 of 7 April 2007 S11, S22 (dB) 900 18.00 -15 -22 Gain / Return Loss (dB) 19 0 DB(|S(1,1)|) (R) 18 DB(|S(2,1)|) (L) DB(|S(2,2)|) (R) -5 FH101 High Dynamic Range FET FH101-G Mechanical Information This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260qC reflow temperature) and leaded (maximum 245qC reflow temperature) soldering processes. Outline Drawing Product Marking The FH101-G will be marked with an "FH1G" designator. An alphanumeric lot code ("XXXX-X") is also marked below the part designator on the top surface of the package. A "1" will be lasermarked in the upper right-hand corner. The obsolete tin-lead package is marked with an "FH1" designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section. Land Pattern MSL / ESD Rating ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1B Passes to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 500V 1000V MSL Rating: Level 3 at +260q C convection reflow Standard: JEDEC Standard J-STD-020 Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) MTTF vs. GND Tab Temperature 1000 MTTF (million hrs) Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Rating -40 to +85qC 59 qC / W 126 qC 100 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 140 mA at an 85 qC case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 qC. 10 1 60 70 80 90 100 Tab Temperature (C) 110 Specifications and information are subject to change without notice. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x Web site: www.wj.com Page 7 of 7 April 2007 |
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